SI2300A datasheet, PDF - EEWORLD Datasheet

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SI2300A: DescriptionDrain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 6A Gate-source threshold voltage: 1V @ 50uA Drain-source on-resistance: 25mΩ @ 6A, 4.5V Maximum power dissipation (Ta =25°C): - Type: N-channel -; CategoryDiscrete semiconductor MOS (field effect tube); File Size822KB，4 Pages; ManufacturerUMW(Guangdong Youtai Semiconductor Co., Ltd.); Websitehttp://www.umw-ic.com/; UMW is a leading provider of LDOs, MOSFETs, DC/DC, RS-232, RS-485, ESD/TVS, optocouplers, logic circuits, temperature sensor from mainland China. UTD's solutions enable low-risk development, lower overall system cost, and faster time-to-market for a variety of global applications.

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SI2300A Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 6A Gate-source threshold voltage: 1V @ 50uA Drain-source on-resistance: 25mΩ @ 6A, 4.5V Maximum power dissipation (Ta =25°C): - Type: N-channel -

SI2300A Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	20V
Continuous drain current (Id) at 25°C	6A
Gate-source threshold voltage	1V @ 50uA
Drain-source on-resistance	25mΩ @ 6A,4.5V
Maximum power dissipation (Ta=25°C)	-
type	N channel

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UMW

UMW SI2300A

UMW

SI2300A

(BR)DSS

N-Channel 20-V(D-S) MOSFET

DS(on)

MAX

25mΩ

4.5V

34.5

mΩ

2.5V

SOT-23

1. GATE

2. SOURCE

3. DRAIN

FEATURE

TrenchFET Power MOSFET

APPLICATION

Load Switch for Portable Devices

DC/DC Converter

MARKING

Equivalent Circuit

C009T

Maximum ratings (T

=25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Continuous Source-Drain Current(Diode Conduction)

Power Dissipation

Thermal Resistance from Junction to Ambient

(t≤5s)

Operating Junction

Storage Temperature

Symbol

θJA

STG

312.5

150

-55 ~+150

Value

±12

Unit

℃/W

℃

0.6

www.umw-ic.com

友台半导½有限公司

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