SHANGHAI
MICROELECTRONICS CO., LTD.
June 2006
SESD9D Series
ESD Protection Diode
Revision:B
General Description
The SESD9D Series is designed to protect Voltage
sensitive components from ESD. Excellent clamping
capability, low leakage, and fast response time provide best
in class protection on designs that are exposed to ESD.
Because of its small size, it is suited for use in cellular
phones, MP3 players, digital cameras and many other
portable applications where board space is at a premium.
Features
Small Body Outline Dimensions:
0.039″ x 0.024″(1.0 mm x 0.60 mm)
Low Body Height: 0.017″ (0.43 mm) Max
Stand−off Voltage: 3.3 V
−
24 V
Low Leakage
Response Time is Typically < 1 ns
Applications
Cellular phones audio
MP3 players
Digital cameras
Portable applications
mobile telephone
Complies with the following standards
IEC61000-4-2
Level 4
15 kV (air discharge)
8 kV(contact discharge)
MIL STD 883E - Method 3015-7 Class 3
25 kV HBM (Human Body Model)
Functional diagram
SOD-923
Maximum Ratings
Parameter
IEC 61000-4-2 (ESD) Contact
ESD Voltage
Per Human Body Model
Per Machine Model
Peak Pulse Power (t
p
= 8/20μs) @ T
A
=25℃
Junction and Storage Temperature Range
Lead Solder Temperature – Maximum (10 Second Duration)
P
D
T
J
,T
STG
T
L
Symbol
Value
8
25
400
60
-55 to 150
260
Unit
kV
kV
V
W
℃
℃
ShangHai Sino-IC Microelectronics Co., Ltd.
1
SESD9D Series
Electrical Parameter
Symbol
I
PP
V
C
V
RWM
I
R
I
T
V
BR
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @
V
RWM
Test Current
Breakdown Voltage @ I
T
Forward Current
Forward Voltage @ I
F
Electrical Characteristics
(T
A
=25℃ unless otherwise noted, V
F
=0.9V Max. @ I
F
=10mA for all types)
Part
Numbers
Min.
V
SESD9D3V3
SESD9D5V
SESD9D7V
SESD9D12V
SESD9D24V
5.0
6.2
7.5
13.5
22.8
V
BR
Typ.
V
5.7
6.8
8.1
14.2
24.0
Max.
V
6.4
7.6
8.6
15.0
26
I
T
mA
2.5
1.0
1.0
1.0
5.0
V
RWM
V
3.0
5.0
7.0
12.0
24.0
I
R
µA
1
1
1
1
0.5
V
F
Max.
V
1.25
1.25
1.25
1.25
1.25
I
F
mA
10
10
10
10
10
C
Typ.
(Note1)
pF
40
25
25
15
8.5
1.Capacitance
is measured at f=1MHz, V
R
=0V,T
A
=25℃.
Typical Characteristics
Fig 1. Typical Breakdown Voltage
versus Temperature
Fig 2. Typical Leakage Current versus
Temperature
ShangHai Sino-IC Microelectronics Co., Ltd.
2
SESD9D Series
Fig 3.
8/20
μs
Pulse Waveform
Fig 4. Positive 8kV contact per IEC
61000-4-2-SESD9D5V
Fig 5. Negative 8kV contact per IEC
61000-4-2-SESD9D5V
SOD-923 Mechanical Data
ShangHai Sino-IC Microelectronics Co., Ltd.
3
SESD9D Series
Dim
Min
A
b
c
D
E
H
E
L
0.36
0.15
0.07
0.75
0.55
0.95
0.05
Millimeters
Nom
0.40
0.20
0.12
0.80
0.60
1.00
0.10
Max
0.43
0.25
0.17
0.85
0.65
1.05
0.15
Min
0.014
0.006
0.003
0.030
0.022
0.037
0.002
Inches
Nom
0.016
0.008
0.005
0.031
0.024
0.039
0.004
Max
0.017
0.010
0.007
0.033
0.026
0.041
0.006
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402 33932403 33932405 33933508 33933608
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronics Co., Ltd.
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