SED8840 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> MOS (field effect tube)> SED8840

SED8840: DescriptionDrain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 10A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 9.5mΩ @ 10A, 4.5V Maximum power dissipation ( Ta=25°C): 1.7W Type: Dual N-channel (common drain) N-channel, 20V; CategoryDiscrete semiconductor MOS (field effect tube); File Size408KB，6 Pages; ManufacturerSINO-IC Microelectronic Co., Ltd.; Websitehttp://www.sino-ic.net; Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.

Download Datasheet Parametric View All

SED8840 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 10A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 9.5mΩ @ 10A, 4.5V Maximum power dissipation ( Ta=25°C): 1.7W Type: Dual N-channel (common drain) N-channel, 20V

SED8840 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	20V
Continuous drain current (Id) at 25°C	10A
Gate-source threshold voltage	1V @ 250uA
Drain-source on-resistance	9.5mΩ @ 10A,4.5V
Maximum power dissipation (Ta=25°C)	1.7W
type	Dual N-channel (common drain)

SED8840 Preview

Download Datasheet

View All

Jul 2014

SED8840

Dual N-Channel Enhancement-Mode MOSFET

Revision: A

General Description

Thigh Density Cell Design For Ultra Low

On-Resistance Fully Characterized Avalanche

Voltage and Current Improved Shoot-Through

FOM



Simple Drive Requirement

Small Package Outline

Surface Mount Device

Features

For a single MOSFET



= 20V

DS(ON)

= 8.5mΩ @ V

=4.5V

Pin configurations

See Diagram below

DFN5X2

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Total Power Dissipation

Continuous

Pulsed

@TA=25℃

Symbol

Rating

±12

1.7

-55 to 150

Units

℃

Operating Junction Temperature Range

ShangHai Sino-IC Microelectronic Co., Ltd.

Recommended Resources

Three primary color display circuit

Pulse trigger monostable circuit

MOS inverter circuit

Lighting controller composed of digital circuits

Optocoupler constitutes signal input circuit (3)

photosensitive oscillator circuit

Keil5 software simulation problem: When keil5 software is simulating, I set a breakpoint in the main function, and then click run to try to jump to the breakpoint, but the following situation occursSet the breakpoint at the LED0=1 stat...; 反倒是fdsf stm32/stm8

What does this paragraph in the ADS1220 data sheet mean?: Just as the title says....; chenbingjy Analog electronics

Mobile IoT market statistics: Huawei chips rank second in the world: From: http://www.techweb.com.cn/it/2021-09-13/2857332.shtmlIoT has become a hot spot and a "battlefield" for Internet manufacturers. In a broad sense, smart cars, smart home appliances, wearable devic...; dcexpert Talking

[ESP32 Learning_1] The first ESP32-S3 example - hello_world: [i=s]This post was last edited by mars4zhu on 2022-7-16 20:00[/i]The first ESP32-S3 example - hello_worldCompile and runFollowing the step-by-step instructions in the document, execute the following c...; mars4zhu DigiKey Technology Zone

How TI dual-core processor ARM+DSP achieves collaborative work: [size=4][color=#000000] In view of the complexity of current applications, SOC chips can better meet the needs of applications and media, integrate many interfaces, use ARM as an application processor...; fish001 DSP and ARM Processors

GD32F307VG supports Mbed development: GD32F307VG based on the Cotex-M4 core now supports Mbed.[url]https://os.mbed.com/platforms/GD32-F307VG/[/url]...; dcexpert GD32 MCU

Popular Components