SED10070GG datasheet, PDF - EEWORLD Datasheet

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SED10070GG: DescriptionDrain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 70A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 9.8mΩ @ 39A, 10V Maximum power dissipation (Ta =25°C): 170W Type: N-channel N-channel 100V 70A; CategoryDiscrete semiconductor MOS (field effect tube); File Size416KB，6 Pages; ManufacturerSINO-IC Microelectronic Co., Ltd.; Websitehttp://www.sino-ic.net; Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.

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SED10070GG Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 70A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 9.8mΩ @ 39A, 10V Maximum power dissipation (Ta =25°C): 170W Type: N-channel N-channel 100V 70A

SED10070GG Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	100V
Continuous drain current (Id) at 25°C	70A
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	9.8mΩ @ 39A,10V
Maximum power dissipation (Ta=25°C)	170W
type	N channel

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SED10070GG

N-Channel Enhancement-Mode MOSFET

Revision: A

General Description

Advanced trench technology to provide

excellent RDS(ON), low gate charge and low

operation voltage. This device is suitable for

using as a load switch or in PWM

applications.



Simple Drive Requirement



Small Package Outline

Surface Mount Device



Pin configurations

See Diagram below

Features

For a single MOSFET



= 100V

DS(ON)

= 8.2mΩ @ V

=10V

DFN5*6

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Total Power Dissipation

Continuous

1,2,3

Pulsed

@TA=25℃

Symbol

Rating

100

±20

280

170

580

-55 to 150

Units

℃

Single-pulse avalanche energy

Operating Junction Temperature Range

Thermal Resistance

Symbol

θJA

Parameter

Junction to Ambient

Min

Typ

0.88

Units

℃/W

ShangHai Sino-IC Microelectronic Co., Ltd.

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