SEB160M-30 datasheet, PDF - EEWORLD Datasheet

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SEB160M-30: DescriptionSchottky Barrier Diode; CategoryDiscrete semiconductor; File Size455KB，3 Pages; ManufacturerSINO-IC Microelectronic Co., Ltd.; Websitehttp://www.sino-ic.net; Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.

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SEB160M-30 Overview

Schottky Barrier Diode

Features

Product Name: Schottky Barrier Diode

Product model: SEB160M-30

product features:

Small power mold type.

Low IR.

High reliability.

Applications:

General rectification

Construction:

Silicon epitaxial planar

Package: SOD-123

Replacement: Rohm RB160M-30

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SHANGHAI

MICROELECTRONICS CO., LTD.

Dec 2007

SEB160M-30

Schottky barrier diode

Features

Small power mold type.

Low IR.

High reliability.

Revision:A

Dimensions(Unit:mm)

Applications

●

General rectification

Construction

●

Silicon epitaxial planar

Absolute maximum ratings (Ta=25℃)

Parameter

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current

Forward current surge peak (60Hz・1cyc)

Junction temperature

Storage temperature

Symbol

Limits

Unit

℃

Conditions

=0.5A

=1.0A

=15V

=30V

125

-40 to +125

Max.

0.39

0.43

Unit

μA

FSM

stg

Electrical c

haracteristi

cs (Ta=25℃)

Parameter

Forward voltage

Reverse current

Symbol

Min.

—

Typ.

—

ShangHai Sino-IC Microelectronics Co., Ltd.

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