SEA143ZG datasheet, PDF - EEWORLD Datasheet

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SEA143ZG: Description-50V -100mA digital transistor; CategoryDiscrete semiconductor; File Size266KB，4 Pages; ManufacturerSINO-IC Microelectronic Co., Ltd.; Websitehttp://www.sino-ic.net; Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.

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SEA143ZG Overview

-50V -100mA digital transistor

Features

Product Name: -50V -100mA Digital Transistor

Product model: SEA143ZG

Product Description:

1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit).

2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.

3. Only the on / off conditions need to be set for operation, making the device design easy.

application:

Inverter, Interface, Driver

Construction：

PNP epitaxial planar silicon transistor (Resistor built-in type)

Package:

TODAY-723

replacement product:

Rohm DTC143ZMA

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SHANGHAI

MICROELECTRONICS CO., LTD.

June 2006

SEA143ZG

-100mA / -50V Digital transistors

Features

●

Built-in bias resistors enable the configuration

of an inverter circuit without connecting external

input resistors (see the equivalent circuit).

●

The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing of

the input. They also have the advantage of almost

completely eliminating parasitic effects.

●

Only the on / off conditions need to be set for

operation, making the device design easy.

Revision:A

Applications

●

Inverter, Interface, Driver

Construction

●

PNP epitaxial planar silicon transistor

(Resistor built-in type)

Absolute maximum ratings (Ta=25℃)

Parameter

Symbol

Limits

Unit

Supply voltage

Input voltage

Output current

Power dissipation

Junction temperature

Storage temperature

C(MAX)

Tstg

θJA

-50

-5 to +12

-100

150

-55 to +150

℃

Thermal Characteristics

Thermal Resistance,Junction-to-Ambient (Note 2)

Electrical characteristics (Ta=25℃)

Parameter

Symbol

Conditions

Min..

Typ.

Max.

Unit

I(off)

Input voltage

I(on)

Output voltage

O(on)

=-5V,

=-100uA

=-0.3V, I

=-5mA

=5mA/0.25mA

-1.3

-0.1

-0.5

-0.3

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