SE8205L datasheet, PDF - EEWORLD Datasheet

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SE8205L: DescriptionMOS tube field effect tube 20V 6A N channel; CategoryDiscrete semiconductor; File Size295KB，4 Pages; ManufacturerSINO-IC Microelectronic Co., Ltd.; Websitehttp://www.sino-ic.net; Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.

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SE8205L Overview

MOS tube field effect tube 20V 6A N channel

Features

Product name: MOS field effect tube 20V 6A N channel

Product model: SE8205L

product features:

VDS = 20V, ID = 6A

RDS(ON) < 32.5mΩ @ VGS=2.5V

RDS(ON) < 22.5mΩ @ VGS=4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

Applications:

Battery protection

Load switch

Power management

Construction ：

Silicon epitaxial planer

Package: TSSOP-8

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SHANGHAI

MICROELECTRONICS CO., LTD.

June 2006

SE8205L

N-Channel Enhancement Mode Field Effect Transistor

Revision:B

External Dimensions: (Unit:mm)

Features

●

= 20V,I

= 6A

DS(ON)

< 32.5mΩ @ V

=2.5V

DS(ON)

< 22.5mΩ @ V

=4.5V

●

High Power and current handing capability

●

Lead free product is acquired

●

Surface Mount Package

Applications

●

Battery protection

●

Load switch

●

Power management

Construction

●

Silicon epitaxial planer

Absolute maximum ratings (Ta=25℃)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous@

Current-Pulsed (Note 1)

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

Symbol

STG

Limits

±10

1.5

-55 To 150

Unit

℃

THERMAL CHARACTERISTICS

Thermal Resistance,Junction-to-Ambient (Note 2)

θJA

℃

Electrical characteristics (Ta=25℃)

Parameter

OFF

CHARACTERISTICS

Symbol

Conditions

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

DSS

=0V I

=250μA

=20V,V

=0V

=±10V,V

=0V

0.8

±80

μA

GSS

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