SE6880 datasheet, PDF - EEWORLD Datasheet

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SE6880: DescriptionDrain-source voltage (Vdss): 68V Continuous drain current (Id) (at 25°C): 80A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 8.5mΩ @ 40A, 10V Maximum power dissipation (Ta =25°C): 110W Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size753KB，10 Pages; ManufacturerSINO-IC Microelectronic Co., Ltd.; Websitehttp://www.sino-ic.net; Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.

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SE6880 Overview

Drain-source voltage (Vdss): 68V Continuous drain current (Id) (at 25°C): 80A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 8.5mΩ @ 40A, 10V Maximum power dissipation (Ta =25°C): 110W Type: N-channel

SE6880 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	68V
Continuous drain current (Id) at 25°C	80A
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	8.5mΩ @ 40A,10V
Maximum power dissipation (Ta=25°C)	110W
type	N channel

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Oct 2014

SE6880

N-Channel Enhancement-Mode MOSFET

Revision: A

General Description

This type used advanced trench technology and

design to provide excellent R

DS(ON)

with low gate

charge.

High density cell design for ultra low R

DS(ON)

Excellent package for good heat dissipation

Features

For a single MOSFET

= 68V

DS(ON)

= 7mΩ @ V

=10V

Pin configurations

See Diagram below

TO-263

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous

Drain Current

Pulsed

Total Power Dissipation

@TA=25℃

Symbol

TO-252

Rating

±20

Units

220

110

-55 to 175

℃

Operating Junction Temperature Range

ShangHai Sino-IC Microelectronic Co., Ltd.

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