SHANGHAI
MICROELECTRONICS CO., LTD.
July 2008
SE4N60
4A,600V N-Channel MOSFET
Revision:A
General Description
The MOSFETs from SINO-IC provide
the best combination of fast switching, low
on-resistance and cost-effectiveness.
Features
●
V
DS
(V) = 700V @150℃
●
I
D
= 4A
●
R
DS(ON)
<2.3Ω (V
GS
= 10V)
Pin configurations
See Diagram below
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DS
V
GS
I
D
P
D
T
J
Rating
600
±30
Units
V
V
A
W
°C
Drain Current (Note 1)
Total Power Dissipation
Continuous
Pulsed
4
15
105
-50 to 150
Operating Junction Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Case-to-Sink
Symbol
t
≤
10s
Steady-State
Steady-State
Typ
54
-
0.76
Max
65
0.5
0.95
Units
°C/W
°C/W
°C/W
R
θ
JA
R
θCS
R
θ
JC
Maximum Junction-to-
- Case
ShangHai Sino-IC Microelectronics Co., Ltd.
1.
SE4N60
Electrical Characteristics
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
iss
C
oss
C
rss
TON
TOFF
Tr
Tf
Qg(10)
Qgs
Qgd
trr
(T
J
=25°C unless otherwise noted)
Test Conditions
I
D
=250μA, V
GS
=0 V
V
DS
=600 V, V
GS
=0 V
V
DS
=0 V, V
GS
=±30 V
V
DS
=V
GS
I
D
=250μA
V
GS
=10V, I
D
=2.5 A
V
Ds
=40V, I
D
=2.5A
3
3.9
2
7.7
562
58
5.4
20
33
42
35
17
2.9
8
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
2
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Min
600
Typ
Max
Units
V
OFF/ON CHARACTERISTICS (Note 2)
1
±
100
μA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
5
2.2
-
-
433
-
632
70
6.5
24
42
53
47
18
3.8
10
250
2.4
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=25V, f=1MHz
43
3.9
-
Turn-Off Time
Turn-on Rise Time
Turn-on Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
VDS =300V, I
D
= 5A,VGS = 10
V,RGEN =25Ω
-
-
-
-
V
DS
=480V,I
D
=2A,V
GS
=10V
I
F
=5A, dI/dt=100A/μs
I
F
=5A, dI/dt=100A/μs
-
-
-
-
207
2
ns
uc
Qrr
ShangHai Sino-IC Microelectronics Co., Ltd.
2.
SE4N60
Typical Characteristics
ShangHai Sino-IC Microelectronics Co., Ltd.
3.
SE4N60
`
ShangHai Sino-IC Microelectronics Co., Ltd.
4.
SE4N60
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402 33932403 33932405 33933508 33933608
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronics Co., Ltd.
5.
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