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SE4606

Description
MOS tube field effect tube 30V 8.5A
CategoryDiscrete semiconductor   
File Size334KB,8 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
Download Datasheet Parametric View All

SE4606 Overview

MOS tube field effect tube 30V 8.5A

Features

Product name: MOS field effect tube 30V 8.5A


Product model: SE4606


product features:


n-channel,


VDS (V) = 30V ,ID = 8.5A


RDS(ON) < 26mΩ (VGS=10V), RDS(ON)< 40mΩ (VGS=4.5V)


p-channel,


VDS (V) = -30V ,ID =- 4.9A


RDS(ON) < 53mΩ (VGS=10V), RDS(ON) < 85mΩ (VGS=4.5V)



Applications:


Power Management in Desktop or DC/DC Converters



Construction:


Silicon epitaxial planer




Package: SOP-8


SE4606 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C8.5A,5A
Gate-source threshold voltage3V @ 250uA,2V @ 250uA
Drain-source on-resistance26mΩ @ 8.5A,10V;53mΩ @ 4.9A,10V
Maximum power dissipation (Ta=25°C)3W,2W
typeN channel and P channel

SE4606 Preview

Download Datasheet
SHANGHAI
MICROELECTRONICS CO., LTD.
June 2006
SE4606
Complementary
Enhancement Mode Field Effect Transistor
Revision:A
External Dimensions: (Unit:mm)
Features
n-channel,
V
DS
(V) = 30V ,I
D
= 8.5A
R
DS(ON)
< 26mΩ (V
GS
=10V), R
DS(ON)
< 40mΩ
(V
GS
=4.5V)
p-channel,
V
DS
(V) = -30V ,I
D
=- 4.9A
R
DS(ON)
< 53mΩ (V
GS
=10V), R
DS(ON)
< 85mΩ
(V
GS
=4.5V)
Applications
Power Management in Desktop or DC/DC
Converters
Construction
Silicon epitaxial planer
Absolute maximum ratings (Ta=25℃)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@
Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
I
D
Symbol
V
DS
V
GSS
TA=25°C
TA=70°C
I
DM
P
D
T
J
,T
STG
Max n-channel
30
±20
8.5
7.4
50
3
-55 To 150
Max P-channel
-30
±20
-5
-4
-30
2
-55 To 150
Unit
V
V
A
A
W
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
62.5
62.5
/W
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
OFF
CHARACTERISTICS
Symbol
Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V I
D
=250μA
30
V

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