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SE40P20B

Description
Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 20A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 32mΩ @ 5A, 10V Maximum power dissipation (Ta= 25°C): 80W Type: P-channel P-channel -40V -20A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size558KB,5 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
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SE40P20B Overview

Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 20A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 32mΩ @ 5A, 10V Maximum power dissipation (Ta= 25°C): 80W Type: P-channel P-channel -40V -20A

SE40P20B Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)40V
Continuous drain current (Id) at 25°C20A
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance32mΩ @ 5A,10V
Maximum power dissipation (Ta=25°C)80W
typeP channel

SE40P20B Preview

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SE40P20B
P-Channel MOSFET
Revision: A
General Description
This series is a high voltage power MOSFET
and is designed to have better characteristics,
low on-state resistance and have a high
rugged avalanche characteristics
Features
For a single MOSFET
such as fast switching time, low gate charge,
V
DS
= -40V
R
DS(ON)
= 26mΩ @ V
GS
=-10V
Pin configurations
See Diagram below
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Operating Junction Temperature Range
Continuous
Pulsed
Symbol
V
DS
V
GS
I
D
P
D
T
J
Rating
-40
±20
-20
-50
80
-55 to 150
Units
V
V
A
W
Thermal Resistance
Symbol
R
θJA
Parameter
Junction to Ambient
Typ
Max
20
Units
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
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