SE3080G datasheet, PDF - EEWORLD Datasheet

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SE3080G: DescriptionDrain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 80A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 6.5mΩ @ 25A, 10V Maximum power dissipation (Ta =25°C): 83W Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size340KB，6 Pages; ManufacturerSINO-IC Microelectronic Co., Ltd.; Websitehttp://www.sino-ic.net; Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.

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SE3080G Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 80A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 6.5mΩ @ 25A, 10V Maximum power dissipation (Ta =25°C): 83W Type: N-channel

SE3080G Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	30V
Continuous drain current (Id) at 25°C	80A
Gate-source threshold voltage	3V @ 250uA
Drain-source on-resistance	6.5mΩ @ 25A,10V
Maximum power dissipation (Ta=25°C)	83W
type	N channel

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