SE2102E datasheet, PDF - EEWORLD Datasheet

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SE2102E: DescriptionMOS tube field effect tube 20V 600mA N channel; CategoryDiscrete semiconductor; File Size404KB，5 Pages; ManufacturerSINO-IC Microelectronic Co., Ltd.; Websitehttp://www.sino-ic.net; Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.

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SE2102E Overview

MOS tube field effect tube 20V 600mA N channel

Features

Product name: MOS field effect tube 20V 600mA N channel

Product model: SE2102E

Product Description:

The MOSFETs from SINO-IC provide the best combination of fast switching, low on-resistance and cost-effectiveness.

product features:

VDS (V) = 20V

ID = 600mA

RDS(ON) < 350mΩ (VGS = 4.5V)

RDS(ON) < 470mΩ (VGS = 2.5V)

Package: SOT-523

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SHANGHAI

MICROELECTRONICS CO., LTD.

July 2009

SE2102E

Small Signal MOSFET

20 V, 600 mA, Single N-Channel MOSFET

General Description

The MOSFETs from SINO-IC provide the

best combination of fast switching, low

on-resistance and cost-effectiveness.

Features

●

DS (V)

= 20V

= 600mA

DS(ON)

< 350mΩ (V

= 4.5V)

DS(ON)

< 470mΩ (V

= 2.5V)

Pin configurations

See Diagram below

MAXIMUM RATINGS (T

=25°C unless otherwise noted)

Parameter

Symbol

Value

Units

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current(Note1))

Power Dissipation

(Note 1)

Pulsed Drain Current

DSS

TA = 25°C

TA = 85°C

STG

±6.0

600

400

170

−55

150

250

260

Steady

State

Steady State

=10 µs

°C

Operating Junction and Storage Temperature

Continuous Source Current (Body Diode)

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

ShangHai Sino-IC Microelectronics Co., Ltd.

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