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SD620CT_09

Description
6 A, 20 V, SILICON, RECTIFIER DIODE, TO-251AB
Categorysemiconductor    Discrete semiconductor   
File Size38KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SD620CT_09 Overview

6 A, 20 V, SILICON, RECTIFIER DIODE, TO-251AB

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SD620CT~SD660CT
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
20 to 60 Volts
CURRENT
6.0 Amperes
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory Flammability Classification
94V-O
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Low power loss, High efficiency
• High surge capacity
• For use in low voltage high frequency inverters, free wheeling, and
polarity protection applications
.307(7.8)
.225(5.7)
.209(5.3)
.063(1.6)
.047(1.2)
.216(5.5)
.200(5.1)
.264(6.7)
.248(6.3)
.098(2.5)
.082(2.1)
.024(0.6)
.016(0.4)
TO-251AB
Unit : inch (mm)
• High temperature soldering guaranteed:260
O
C/10 seconds at terminals
• In compliance with EU RoHS 2002/95/EC directives
.283(7.2)
.071(1.8)
.051(1.3)
.032(0.8)
.012(0.3)
.02(0.5)
MECHANICALDATA
• Case: TO-251AB molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
• Polarity: As marking
• Standard packaging: 16mm tape (EIA-481)
• Weight: 0.0104 ounces, 0.297 grams.
.09 .09
(2.3) (2.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt a t Tc = 7 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 3 . 0 A p e r l e g
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng Vo l t a g e T
J
= 1 0 0
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n Te m p e r a t u r e R a n g e
S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
S D 6 2 0 C T S D 6 3 0 C T S D 6 4 0 C T S D 6 5 0 C T S D 6 6 0 C T
V
RRM
V
RSM
V
D C
I
F ( A V )
I
F S M
V
F
I
R
R
θ
J C
T
J
T
S TG
-5 5 to +1 2 5
0 .5 5
0 .2
20
5
-5 5 to +1 5 0
-5 5 to +1 5 0
20
14
20
30
21
30
40
28
40
6 .0
75
0 .7
0 .1
20
50
35
50
60
42
60
U N IT S
V
V
V
A
A
V
mA
O
C / W
O
C
C
O
Note: Both Bonding and Chip structure are available.
STAD-APR.27.2009
PAGE . 1
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