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SD103CWS

Description
20 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size73KB,3 Pages
ManufacturerNanjing International Group Co.,Ltd
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SD103CWS Overview

20 V, SILICON, SIGNAL DIODE

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SD103AWS...SD103CWS
Surface Mount Schottky Barrier Diodes
PINNING
Features
• Low Forward Voltage
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
S4
Top View
Marking Code:
S4
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Repetitive Reverse Voltage
Reverse Voltage
SD103AWS
SD103BWS
SD103CWS
SD103AWS
SD103BWS
SD103CWS
Symbol
V
RRM
V
R
I
F(AV)
I
FSM
P
tot
T
j
, T
stg
Value
40
30
20
40
30
20
350
2
200
- 65 to + 125
Unit
V
V
mA
A
mW
O
Average Forward Rectified Current
Non-Repetitive Peak Forward Surge Current at t = 1 s
Power Dissipation
Operating and Storage Temperature Range
C
Characteristics at T
a
= 25
O
C
Parameter
Reverse Breakdown Voltage
at I
R
= 10 µA
SD103AWS
SD103BWS
SD103CWS
SD103AWS
SD103BWS
SD103CWS
Symbol
V
(BR)R
Min.
40
30
20
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
50
10
Max.
-
-
-
5
5
5
0.37
0.6
-
-
Unit
V
Reverse Leakage Current
at V
R
= 30 V
at V
R
= 20 V
at V
R
= 10 V
Forward Voltage
at I
F
= 20 mA
at I
F
= 200 mA
Total Capacitance
at V
R
= 0 V, f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 200 mA, I
rr
= 0.1 I
R
, R
L
= 100
I
R
µA
V
F
C
T
t
rr
V
pF
ns
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