SBU8G datasheet, PDF - EEWORLD Datasheet

SBU8G: Description8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size78KB，2 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SBU8G Overview

8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Reach Compliance Code	compli
ECCN code	EAR99
Minimum breakdown voltage	400 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	0.98 V
JESD-30 code	R-PSFM-W4
Maximum non-repetitive peak forward current	250 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	6 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	3 µA
Reverse test voltage	400 V
surface mount	NO
Terminal form	WIRE
Terminal location	SINGLE

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