SBT30100VDC_R2_00001 datasheet, PDF

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SBT30100VDC_R2_00001: DescriptionRectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-263AB, TO-263, D2PAK-3/2; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SBT30100VDC_R2_00001 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-263AB, TO-263, D2PAK-3/2

SBT30100VDC_R2_00001 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	TO-263, D2PAK-3/2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	LOW POWER LOSS
application	EFFICIENCY
Shell connection	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.72 V
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
Maximum non-repetitive peak forward current	200 A
Number of components	2
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	15 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	100 V
Maximum reverse current	100 µA
surface mount	YES
technology	SCHOTTKY
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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SBT30100VDC

ULTRA LOW VF SCHOTTKY RECTIFIER

VOLTAGE

FEATURES

• Ultra low forward voltage drop, low power loss

• High efficiency operation

0.357(9.1)

100 Volt

CURRENT

30 Ampere

0.189(4.8)

0.137(4.4)

0.055(1.4)

0.047(1.2)

0.418(10.6)

0.335(8.5)

0.409(10.4)

0.387(9.80)

• Lead free in

compliance with EU RoHS 2011/65/EU directive

0.110(2.8)

0.236(6.0)

0.197(5.0)

0.378(9.60)

0.026(0.7)

0.011(0.3)

MECHANICAL DATA

Case : TO-263/D

PAK, Plastic

Terminals : Solderable per MIL-STD-750, Method 2026

Weight : 0.0514 ounces, 1.46 grams.

0.055(1.4)

0.039(1.0)

0.108(2.75)

0.092(2.35)

0.035(0.9)MAX.

0.108(2.75)

0.092(2.35)

MAXIMUM RATINGS(T

=25

C unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

Maximum rms voltage

Maximum dc blocking voltage

Maximum average forward rectified current

Peak forward surge current : 8.3ms single half

sine-wave superimposed on rated load

Typical thermal resistance

Operating junction temperature range

Storage temperature range

per device

per diode

( No te 1 )

SYMBOL

RRM

RMS

F(AV)

FSM

JC

STG

VALUE

100

200

3.5

-55 to + 150

UNIT

C /W

NOTE : 1.Mounted on infinite heatsink.

ELECTRICAL CHARACTERISTICS(T

=25

C unless otherwise noted)

PARAMETER

Breakdown voltage per diode

SYMBOL

TEST CONDITIONS

=0.5mA

=3A

=5A

=15A

=3A

=5A

=70V

Reverse current per diode

=100V

=25

=125

=25

=125

MIN.

100

TYP.

0.45

0.49

0.67

0.36

0.44

8.5

MAX.

0.72

100

UNIT

A

Instantaneous forward voltage per diode

December 10,2013-REV.00

PAGE . 1

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