SBT30100VDC datasheet, PDF - EEWORLD Datasheet

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SBT30100VDC: DescriptionULTRA low forward voltage drop, low power losses; File Size87KB，5 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ULTRA low forward voltage drop, low power losses

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SBT30100VDC

ULTRA LOW VF SCHOTTKY RECTIFIER

VOLTAGE

FEATURES

• ULTRA low forward voltage drop, low power losses

• High efficiency operation

0.357(9.1)

100 Volt

CURRENT

30 Ampere

0.409(10.4)

0.387(9.80)

0.189(4.8)

0.137(4.4)

0.055(1.4)

0.047(1.2)

0.335(8.5)

• Lead free in comply with EU RoHS 2011/65/EU directives

0.110(2.8)

0.236(6.0)

0.197(5.0)

0.026(0.7)

0.011(0.3)

MECHANICAL DATA

Case : TO-263/D

PAK, Plastic

Terminals : Solderable per MIL-STD-750, Method 2026

Weight : 0.0514 ounces, 1.46 grams.

0.055(1.4)

0.039(1.0)

0.108(2.75)

0.092(2.35)

0.035(0.9)MAX.

0.108(2.75)

0.092(2.35)

MAXIMUM RATINGS(T

=25

C unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

Maximum rms voltage

Maximum dc blocking voltage

Maximum average forward rectified current

Peak forward surge current : 8.3ms single half

sine-wave superimposed on rated load

Typical thermal resistance

Operating junction temperature range

Storage temperature range

per device

per diode

( No te 1 )

SYMBOL

RRM

RMS

F(AV)

FSM

JC

STG

VALUE

100

200

3.5

-55 to + 150

0.378(9.60)

0.418(10.6)

UNIT

C /W

NOTE : 1.Mounted on infinite heatsink.

ELECTRICAL CHARACTERISTICS(T

=25

C unless otherwise noted)

PARAMETER

Breakdown voltage per diode

SYMBOL

TEST CONDITIONS

=0.5mA

=3A

=5A

=15A

=3A

=5A

=70V

Reverse current per diode

=100V

=25

=125

=25

=125

MIN.

100

TYP.

0.45

0.49

0.67

0.36

0.44

8.5

MAX.

0.72

100

UNIT

A

Instantaneous forward voltage per diode

December 10,2013-REV.00

PAGE . 1

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