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SBT20120LFCT

Description
ProductStatus:Active, VRRM Max.(A):120, IF(A):20, IFSM(V):150, VF Max.(A):0.82, @IF(µA):10, IR Max.(V):20, @VR:120, Package:ITO-220AB
CategoryDiscrete semiconductor    diode   
File Size142KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SBT20120LFCT Overview

ProductStatus:Active, VRRM Max.(A):120, IF(A):20, IFSM(V):150, VF Max.(A):0.82, @IF(µA):10, IR Max.(V):20, @VR:120, Package:ITO-220AB

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PSBT20120LFCT
ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER
Voltage
Features
0.112(2.85)
0.100(2.55)
120 V
Current
20 A
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
Ideal for automated placement
Ultra low forward voltage drop, low power loss
High efficiency operation
Low thermal resistance
Easy pick and place package suitable for automated handling
Lead free in compliance with EU RoHS 2011/65/EU directive
0.272(6.9)
0.248(6.3)
0.606(15.4)
0.583(14.8)
Mechanical Data
Case: Molded plastic, ITO-220AB
Terminals: solder plated, solderable per MIL-STD-750,Method 2026
Approx. Weight: 0.056 ounces, 1.6 grams
Marking: Part number
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.177(4.5)
0.137(3.5)
0.543(13.8)
0.512(13.0)
0.114(2.9)
0.098(2.5)
0.100(2.55)
0.027(0.67)
0.022(0.57)
Maximum Ratings And Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum rms voltage
Maximum dc blocking voltage
Maximum average forward rectified current
per diode
per device
SYMBOL
V
RRM
V
RMS
V
R
I
F(AV)
LIMIT
120
84
120
10
20
150
9
-55 to +150
-55 to +150
o
o
0.128(3.25)
MIN.
UNIT
V
V
V
A
Peak forward surge current : 8.3ms single half sine-
wave superimposed on rated load per diode
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note : 1. Device mounted on a infinite heatsink .
(Note 1)
I
FSM
R
θJC
T
J
T
STG
A
C/W
o
o
C
C
January 9,2015-REV.01
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