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SBT20100UFCT

Description
Extreme low forward voltage drop, low power losses
File Size109KB，4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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Extreme low forward voltage drop, low power losses

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SBT20100UFCT
EXTREME LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Extreme low forward voltage drop, low power losses
• High efficiency operation
• Lead free in compliance with EU RoHS 2011/65/EU directives
100 Volt
CURRENT
20 Ampere
0.100(2.55)
0.112(2.85)
0.272(6.9)
0.248(6.3)
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
0.606(15.4)
0.583(14.8)
0.128(3.25)
MECHANICAL DATA
Case : ITO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight : 0.056 ounces, 1.6 grams.
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.543(13.8)
0.177(4.5)
0.137(3.5)
0.512(13.0)
0.114(2.9)
0.098(2.5)
0.100(2.55)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS (T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum rms voltage
Maximum dc blocking voltage
Maximum average forward rectified current
Peak forward surge current : 8.3ms single half
sine-wave superimposed on rated load
Typical thermal resistance
Operating junction temperature range
Storage temperature range
per device
per diode
per diode
( No te 1 )
SYMBOL
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
R
JC
T
J
T
STG
VALUE
100
70
100
20
10
200
15
-55 to + 150
-55 to + 150
O
MIN.
UNIT
V
V
V
A
A
C /W
o
C
C
o
Note : 1. Mounted on infinite heatsink.
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage per diode
SYMBOL
V
BR
TEST CONDITIONS
I
R
=0.5mA
I
F
=3A
I
F
=5A
I
F
=10A
I
F
=3A
I
F
=5A
I
F
=10A
V
R
=80V
Reverse current per diode
I
R
V
R
=100V
T
J
=25
o
C
T
J
=125
o
C
T
J
=25 C
o
MIN.
100
-
-
-
-
-
-
-
-
-
TYP.
-
0.45
0.49
0.59
0.36
0.43
0.56
10
-
15
MAX.
-
-
-
0.65
-
-
-
-
180
-
UNIT
V
V
Instantaneous forward voltage per
diode
V
F
T
J
=125
o
C
V
A
A
mA
December 13,2013-REV.00
PAGE . 1

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