SBM845LSS_AY_10001 datasheet, PDF

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SBM845LSS_AY_10001: DescriptionRectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 45V V(RRM), Silicon, DO-201AD,; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SBM845LSS_AY_10001 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 45V V(RRM), Silicon, DO-201AD,

SBM845LSS_AY_10001 Parametric

Parameter Name	Attribute value
Maker	PANJIT
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.5 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	8 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	45 V
Maximum reverse current	250 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	WIRE
Terminal location	AXIAL

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SBM845LSS

ULTRA LOW VF SCHOTTKY RECTIFIER

VOLTAGE

FEATURES

• Ultra low forward voltage drop, low power losses

• High efficiency operation

• Lead free in comply with EU RoHS 2011/65/EU directives

0.375(9.5)

0.285(7.2)

1.0(25.4)MIN.

45 Volts

CURRENT

8 Amperes

0.052(1.3)

0.048(1.2)

MECHANICAL DATA

Case : Molded plastic, DO-201AD

Terminals : Axial leads,solderable per MIL-STD-750, Method 2026

Polarity : Color band denotes cathode end

Approx weight : 0.0402 ounces, 1.142 grams

Cathode

Anode

MAXIMUM RATINGS(T

=25

C unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

Maximum rms voltage

Maximum dc blocking voltage

Maximum average forward rectified current

Peak forward surge current : 8.3ms single half sine-wave

superimposed on rated load

Typical thermal resistance

Operating junction temperature range

Storage temperature range

(Note 1)

SYMBOL

RRM

RMS

F(AV)

FSM

JA

JL

STG

VALUE

150

-55 to + 150

1.0(25.4)MIN.

0.210(5.3)

0.188(4.8)

UNIT

C /W

Note : 1.The testing condition of the thermal resistance (junction to ambient and junction to lead) is based on

0.375”(9.5mm) lead length between two 10x10cm copper pad heatsinks.

ELECTRICAL CHARACTERISTICS(T

=25

C unless otherwise noted)

PARAMETER

Breakdown voltage

SYMBOL

TEST CONDITIONS

=0.5mA

=1A

=5A

=8A

=1A

=5A

=36V

Reverse current

=45V

=25

=125

=25

=125

MIN.

TYP.

0.3

0.39

0.43

0.2

0.33

MAX.

0.5

250

UNIT

A

Instantaneous forward voltage

October 2,2013-REV.00

PAGE . 1

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