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SBM3045VCT

Description
ProductStatus:Active, VRRM Max.(A):45, IF(A):30, IFSM(V):300, VF Max.(A):0.48, @IF(µA):15, IR Max.(V):320, @VR:45, Package:TO-220AB
CategoryDiscrete semiconductor    diode   
File Size137KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SBM3045VCT Overview

ProductStatus:Active, VRRM Max.(A):45, IF(A):30, IFSM(V):300, VF Max.(A):0.48, @IF(µA):15, IR Max.(V):320, @VR:45, Package:TO-220AB

SBM3045VCT Preview

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SBM3045VCT
UlTRA LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Ultra Low forward voltage drop, low power losses
• High efficiency operation
• Lead free in comply with EU RoHS 2011/65/EU directives
45 Volts
CURRENT
30 Amperes
MECHANICAL DATA
Case : TO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.065 ounces, 1.859 grams.
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
Typical junction capacitance (V
R
=4V, f=1MHz)
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
(Note 1)
per device
per diode
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
C
J
R
JC
T
J
T
STG
VALUE
45
30
15
300
1100
2
-55 to + 150
-55 to + 150
o
UNIT
V
A
A
pF
C/W
o
C
C
o
Note : 1. Mounted on infinite heatsink.
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage per diode
SYMBOL
V
BR
TEST CONDITIONS
I
R
=0.5mA
I
F
=1A
I
F
=5A
I
F
=15A
I
F
=1A
I
F
=5A
I
F
=15A
V
R
=36V
Reverse current per diode
I
R
V
R
=45V
T
J
=25
o
C
MIN.
45
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.28
0.35
0.44
0.17
0.27
0.4
86
20
-
28
MAX.
-
-
-
0.48
-
-
-
-
-
320
-
UNIT
V
V
Instantaneous forward voltage per diode
V
F
T
J
=125
o
C
T
J
=25
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=125
o
C
V
A
mA
A
mA
June 6,2013-REV.00
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