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SBM1045VDC_R2_00001

Description
RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size93KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SBM1045VDC_R2_00001 Overview

RECTIFIER DIODE

SBM1045VDC_R2_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionHALOGEN FREE, PLASTIC, TO-263, D2PAK-3/2
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.46 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage45 V
Maximum reverse current250 µA
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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SBM1045VDC
UlTRA LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Ultra Low forward voltage drop, low power losses
• High efficiency operation
0.357(9.1)
0.335(8.5)
45 Volts
CURRENT
10 Amperes
0.409(10.4)
0.387(9.80)
0.189(4.8)
0.137(4.4)
0.055(1.4)
0.047(1.2)
0.418(10.6)
0.378(9.60)
• Lead free in comply with EU RoHS 2011/65/EU directives
0.110(2.8)
MECHANICAL DATA
Case : TO-263/D
2
PAK, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.0514 ounces, 1.46 grams.
0.055(1.4)
0.039(1.0)
0.108(2.75)
0.092(2.35)
0.236(6.0)
0.197(5.0)
0.026(0.7)
0.011(0.3)
0.035(0.9)MAX.
0.108(2.75)
0.092(2.35)
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
Typical junction capacitance (V
R
=4V, f=1MHz)
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
(Note 1)
per diode
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
C
J
R
JC
T
J
T
STG
VALUE
45
10
5
150
500
3.5
-55 to + 150
-55 to + 150
o
UNIT
V
A
A
pF
C/W
o
C
C
o
Note : 1. Mounted on infinite heatsink.
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage per diode
SYMBOL
V
BR
TEST CONDITIONS
I
R
=0.5mA
I
F
=1A
I
F
=5A
I
F
=1A
I
F
=5A
V
R
=36V
Reverse current per diode
I
R
V
R
=45V
T
J
=25
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=125
o
C
MIN.
45
-
-
-
-
-
-
-
TYP.
-
0.3
0.4
0.21
0.35
100
-
20
MAX.
-
-
0.46
-
-
-
250
-
UNIT
V
V
V
A
A
mA
Instantaneous forward voltage per diode
V
F
August 6,2013-REV.00
PAGE . 1
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