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SB845

Description
Schottky diodes
CategoryDiscrete semiconductor    diode   
File Size72KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

SB845 Overview

Schottky diodes

Features

Product Name: Schottky Diode


Product model: SB845


parameter:


Repetitive reverse voltage peak Vrrm: 45V


Maximum average rectified current Io: 8A


Maximum forward surge current I FSM: 150A


Forward voltage drop VF: 0.55V when IF=8A


Maximum feedback current IR: 200uA when VR=45V


Package: TO-220AC


SB845 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeSFM
package instructionR-PSFM-T2
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage45 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

SB845 Preview

Download Datasheet
SB820~SB860
D
2
PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
.058(1.47)
.042(1.07)
20 to 60 Volts
CURRENT
8 Ampere
MECHANICALDATA
• Case: TO-220AC molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
Ma xi m um Re c urr e nt P e a k Re ve rs e Vo lta g e
Ma xi m um RMS Vo lta g e
Ma xi m um D C B lo c k i ng Vo lta g e
Ma xi m um A ve ra g e F o r wa rd C urr e nt a t Tc = 7 5
O
C
P e a k F o rwa rd S urg e C urre nt :8 .3 ms s i ng le ha lf s i ne -
wa ve s up e r i m p o s e d o n ra te d lo a d (J E D E C m e tho d )
Ma xi m um F o r wa rd Vo lta g e a t 8 .0 A
Ma xi m um D C Re ve rs e C urr e nt T
J
= 2 5
O
C
a t Ra te d D C B lo c k i ng Vo lta g e T
J
= 1 0 0
O
C
Typ i c a l The rm a l Re s i s ta nc e
Op e r a ti ng J unc ti o n Te m p e ra ture Ra ng e
S to r a g e Te m p e r a ture Ra ng e
S YM B OL S B 8 2 0
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
R
θJ
C
T
J
T
S TG
20
14
20
SB830
30
21
30
SB840
40
28
40
8
SB845
45
3 1 .5
45
SB850
50
35
50
SB860
60
42
60
UNITS
V
V
V
A
A
150
0 .5 5
0 .2
50
4
- 5 5 to + 1 2 5
- 5 5 to + 1 5 0
- 5 5 to + 1 5 0
0 .1
50
O
0 .7 5
V
mA
C / W
O
C
C
O
NOTES:
Both Bonding and Chip structure are available.
STAD-DEC.02.2009
1
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