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SB3060LCT_00001

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size94KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB3060LCT_00001 Overview

Rectifier Diode

SB3060LCT_00001 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codecompliant
Diode typeRECTIFIER DIODE

SB3060LCT_00001 Preview

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SB3060LCT
DUAL HIGH-VOLTAGE SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Low forward voltage drop, low power losses
• High efficiency operation
• Lead free in comply with EU RoHS 2011/65/EU directives
60 Volts
CURRENT
30 Ampers
MECHANICAL DATA
Case : TO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.0655 ounces, 1.859 grams
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig.1)
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy at T
J
=25
o
C,L=60mH per diode
Typ i c a l The r ma l Re s i s ta nc e
Operating junction and storage temperature range
per diode
per device
per diode
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
R
ΘJC
T
J
,T
STG
VALUE
60
30
15
250
450
2 .5
-55 to + 150
O
UNIT
V
A
A
mJ
C /W
o
C
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
=1mA
I
F
=15A
I
F
=30A
I
F
=15A
I
F
=30A
V
R
=60V
T
A
=25
o
C
T
A
=125
o
C
T
A
=25
o
C
T
A
=125
o
C
MIN.
60
-
-
-
-
-
-
TYP.
-
-
-
0.48
0.64
-
-
MAX.
-
0.60
0.75
0.56
0.70
480
150
UNIT
V
V
V
μA
mA
Instantaneous forward voltage per
diode
(1)
V
F
Reverse current per diode
(1)
Note.1 Pulse test : tp=380μs,
δ<2%
I
R
December 28,2012-REV.02
PAGE . 1
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