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SB2540CT-AU

Description
SCHOTTKY BARRIER RECTIFIERS
File Size135KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SCHOTTKY BARRIER RECTIFIERS

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SB2540CT-AU
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
0.624(15.87)
0.419(10.66)
0.387(9.85)
0.139(3.55)
MIN.
0.196(5.00)
0.163(4.16)
0.054(1.39)
0.045(1.15)
40 Volts
CURRENT
25 Amperes
• Low power loss, high efficiency.
• Low forward voltage, high current capability
• High surge capacity.
0.177(4.5)
• Acqire quality system certificate : TS16949
AEC-Q101 qualified
• Lead free in comply with EU RoHS 2002/95/EC directives
0.038(0.96)
0.019(0.50)
MAX.
free wheeling , and polarlity protection applications.
0.50(12.7)MIN.
• For use in low voltage,high frequency inverters
0.548(13.93)
• Exceeds environmental standards of MIL-S-19500/228
0.058(1.47)
0.042(1.07)
0.115(2.92)
0.080(2.03)
0.025(0.65)MAX.
0.100(2.54)
0.100(2.54)
MECHANCEAL DATA
• Case: TO-220AB Molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
Ma xi m um Re c ur re nt P e a k Re ve rs e Vo lta g e
Ma xi m um RMS Vo lt a g e
Ma xi m um D C B lo c k i ng Vo lta g e
Ma xi m um A ve r a g e F o rwa rd C urre nt
P e a k F o rwa rd S ur g e C urr e nt : 8 .3 ms s i ng le ha lf s i ne - wa ve
s up e ri mp o s e d o n r a te d lo a d (J E D E C me tho d )
Ma xi m um F o r wa rd Vo lta g e a t 1 2 .5 A p e r le g
Ma xi m um D C Re ve r s e C ur re nt a t Ra te d D C B lo c k i ng
Vo lta g e
Typ i c a l The r ma l Re s i s ta nc e
Op e r a ti ng J unc t i o n Te mp e ra t ure Ra ng e
S to r a g e Te m p e ra ture Ra ng e
T
J
= 2 5
O
C
T
J
= 1 0 0
O
C
S YMB OL
V
RRM
V
RM S
V
DC
I
F ( AV )
I
F S M
V
F
I
R
R
θJ
C
T
J
T
S TG
VA L UE
40
28
40
25
200
0 .5 5
0 .2
100
2
-5 5 to +1 5 0
-5 5 to +1 5 0
UNITS
V
V
V
A
A
V
mA
O
C / W
O
C
C
NOTE:
Both Bonding and Chip structure are available.
August 25,2010-REV.03
PAGE . 1
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