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SB2020CT_10

Description
20 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size48KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB2020CT_10 Overview

20 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB

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SB2020CT SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low forwrd voltage, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
0.177(4.5)
MAX.
0.058(1.47)
0.042(1.07)
0.038(0.96)
0.019(0.50)
0.50(12.7)MIN.
0.115(2.92)
0.080(2.03)
0.025(0.65)MAX.
0.624(15.87)
0.548(13.93)
0.419(10.66)
0.387(9.85)
0.139(3.55)
MIN.
0.196(5.00)
0.163(4.16)
0.054(1.39)
0.045(1.15)
20 to 60 Volts
CURRENT
20 Amperes
• Low power loss, high efficiency.
MECHANCAL DATA
• Case: TO-220AB Molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.065 ounces, 1.859grams.
0.100(2.54)
0.100(2.54)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
Ma xi mum Re c ur r e nt P e a k Re ve r s e Vo lta g e
Ma xi mum RMS Vo lta g e
Ma xi mum D C B lo c k i ng Vo lta g e
Ma xi mum A ve r a g e F o r wa r d C ur r e nt a t Tc = 7 5
O
S YMB O L
V
RRM
V
RMS
V
DC
C
I
F (AV )
I
F S M
V
F
I
R
R
JC
T
J
T
S TG
SB 2020C T S B2030C T S B2040C T SB2045C T SB2050C T SB 2060C T
UNITS
V
V
V
A
20
14
20
30
21
30
40
28
40
2 0 .0
45
31
45
50
35
50
60
42
60
P e a k F o r wa r d S ur g e C ur r e nt :8 .3 m s s i ng le ha lf
s i ne - wa ve s up e r i mp o s e d o n r a te d lo a d
(J E D E C m e tho d )
Ma xi mum F o r wa r d Vo lta g e a t 1 0 A
p e r le g
T
J
=2 5
O
C
T
J
=1 0 0
O
C
200
A
0 .5 5
0 .2
50
2
- 5 5 to + 1 2 5
- 5 5 to + 1 5 0
- 5 5 to +1 5 0
0 .7 5
V
Ma xi mum D C Re ve r s e C ur r e nt a t Ra te d
D C B lo c k i ng Vo lta g e
Typ i c a l The r ma l Re s i s ta nc e
Op e ra ti ng J unc ti o n Te m p e r a tur e Ra ng e
S to r a g e Te mp e r a ture Ra ng e
mA
O
C / W
O
C
C
O
Note:
Both Bonding and Chip structure are available.
August 25,2010-REV.04
PAGE . 1

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