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SB1620FCT-T0-10001

Description
SB1620FCT-T0-10001
CategoryDiscrete semiconductor    diode   
File Size76KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB1620FCT-T0-10001 Overview

SB1620FCT-T0-10001

SB1620FCT-T0-10001 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codeunknown

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SB1620FCT~SB1660FCT
ISOLATION SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
Lead free in comply with EU RoHS 2002/95/EC directives
20 to 60 Volts
CURRENT
16 Amperes
MECHANICALDATA
• Case: ITO-220AB molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.055 ounces, 1.5615 grams.
.027(.67)
.022(.57)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt l e a d l e ng t h
a t T c = 7 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 8 . 0 A p e r l e g
M a xi m um D C R e ve r s e C ur r e nt a t T
J
= 2 5
O
C
Ra t e d D C B l o c k i ng Vo l t a g T
J
= 1 0 0
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n Te m p e r a t u r e R a n g e
S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
R
θ
J C
T
J
T
S TG
SB1620FCT SB1630FCT SB1640FCT SB1645FCT SB1650FCT SB1660FCT
U N IT S
V
V
V
A
A
20
14
20
30
21
30
40
28
40
16
150
45
3 1 .5
45
50
35
50
60
42
60
0 .5 5
0 .2
100
2 .0
-5 5 to +1 2 5
-5 5 to +1 5 0
-5 5 to +1 5 0
0 .1
100
0 .7 5
V
mA
O
C /
W
C
C
O
O
NOTES:
Both Bonding and Chip structure are available.
STAD-APR.27.2009
PAGE . 1
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