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SB1020DC_09

Description
5 A, 20 V, SILICON, RECTIFIER DIODE, TO-263AB
Categorysemiconductor    Discrete semiconductor   
File Size115KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB1020DC_09 Overview

5 A, 20 V, SILICON, RECTIFIER DIODE, TO-263AB

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SB1020DC~SB1060DC
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
20 to 60 Volts
CURRENT
10 Amperes
MECHANICALDATA
• Case: TO-263 Molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0514 ounces, 1.46 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt a t T
C
= 7 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 5 A ,
M a xi m um D C R e ve r s e C ur r e nt a t T
J
= 2 5
O
C
R a t e d D C B l o c k i ng Vo l t a g e T
J
= 1 0 0
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n Te m p e r a t u r e R a n g e
S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
R
θ
J C
T
J
T
S TG
SB1020DC SB1030DC SB1040DC SB1045DC SB1050DC SB1060DC
U N IT S
V
V
V
A
A
20
14
20
30
21
30
40
28
40
10
150
0 .5 5
45
3 1 .5
45
50
35
50
60
42
60
0 .7 5
0 .1
50
3 .0
O
V
0 .2
50
mA
C / W
O
-5 5 to +1 2 5
-5 5 to +1 5 0
-5 5 to +1 5 0
C
C
O
Note.
Both Bonding and Chip structure are available.
STAD-APR.27.2009
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