SB1020CT datasheet, PDF - EEWORLD Datasheet

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SB1020CT: DescriptionSchottky diodes; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB1020CT Overview

Schottky diodes

Features

Product Name: Schottky Diode

Product model: SB1020CT

parameter:

Repetitive reverse voltage peak Vrrm: 20V

Maximum average rectified current Io: 10A

Maximum forward surge current I FSM: 150A

Forward voltage drop VF: 0.55V when IF=5A

Maximum feedback current IR: 200uA when VR=20V

Package: TO-220AB

SB1020CT Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	TO-220AB
package instruction	R-PSFM-T3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.55 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	150 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	125 °C
Minimum operating temperature	-50 °C
Maximum output current	5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	20 V
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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SB1020CT~SB1060CT

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

• Exceeds environmental standards of MIL-S-19500/228

• Low forward voltage, high current capability

• High surge capacity.

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

0.058(1.47)

0.042(1.07)

0.038(0.96)

0.019(0.50)

0.50(12.7)MIN.

0.624(15.87)

0.548(13.93)

0.419(10.66)

0.387(9.85)

0.139(3.55)

MIN.

0.196(5.00)

0.163(4.16)

0.054(1.39)

0.045(1.15)

20 to 60 Volts

CURRENT

10 Amperes

• Low power loss, high efficiency.

• In compliance with EU RoHS 2002/95/EC directives

0.115(2.92)

0.080(2.03)

0.025(0.65)MAX.

MECHANCAL DATA

• Case: TO-220AB Molded plastic

• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Standard packaging: Any

• Weight: 0.0655 ounces, 1.859 grams.

0.100(2.54)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PA RA ME TE R

Ma xi m um R e c ur re nt P e a k R e ve r s e Vo lta g e

Ma xi m um R MS Vo lta g e

Ma xi m um D C B lo c k i ng Vo lta g e

Ma xi m um A ve r a g e F o rwa r d C urre nt

.3 7 5 " (9 .5 m m) le a d le ng th a t T

= 7 5

P e a k F o r wa rd S ur g e C ur re nt : 8 .3 ms s i ng le

ha lf s i ne - wa ve s up e r i mp o s e d o n ra te d lo a d

( J E D E C me tho d )

Ma xi m um F o r wa rd Vo lta g e a t 5 A p e r le g

Ma xi m um D C Re ve r s e C urr e nt a t

Ra te d D C B lo c k i ng Vo lta g e

Typ i c a l The rm a l R e s i s ta nce

Op e r a ti ng J unc ti o n a nd S to ra g e Te m p e ra tur e

Ra ng e

= 2 5

= 1 0 0

S YM B OL

S B 1 0 2 0 C T S B 1 0 3 0 C T S B 1 0 4 0 C T S B 1 0 4 5 C T S B 1 0 5 0 C T S B 1 0 6 0 C T

RRM

RM S

F ( AV )

F S M

J

S TG

0 .5 5

0 .2

3 .0

- 5 0 to + 1 2 5

0.177(4.5)

MAX.

UNITS

3 1 .5

150

0 .7 5

C / W

NOTE:

Both Bonding and Chip structure are available.

September 2,2010-REV.04

PAGE . 1

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