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RS3D

Description
3.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS 3.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS
CategoryDiscrete semiconductor    diode   
File Size756KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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RS3D Overview

3.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS 3.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS

Features

Product Name: 3.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS


Product model: RS3D


product features:


For surface mounted application



Class passivated junction chip.



Low forward voltage drop



High current capability



Plastic materal used carriers Underwriters Laboratory Classification 94V-0



High temperature soldering:


250℃ / 10 seconds at terrminals



Mechanical data:


Case: Molded plastic


Terminals: Solder plated


Polarity: Indicated by cathode band


Packaging: 12mm tape per EIA STD RS-481


Weight: 0.093 gram



Maximum Ratings and Electrical Characteristics:


Rating at 25℃ ambient temperature unless otherwise specified.


Single phase, half wave, 60 Hz, resistive or inductive load.


For capacitive load, derate current by 20%



product data:


Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 200V



Maximum RMS Voltage VRMS Voltage effective value: 140V



Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 200V



Maximum Average Forward Rectified Current @TL=75℃ IF(AV) Maximum forward current: 3.0 A



Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load IFSM Maximum forward surge current: 100 A



Maximum Instantaneous Forward Voltage @ 3.0A VF Maximum forward voltage drop: 1.3 V



Maximum Reverse Current at Rated @TA=25℃ IR Maximum reverse leakage current: 10μA


DC blocking voltage @TA= 125℃ IR Maximum reverse leakage current: 250μA



Maximun Reverse Recovery Time TRR :150 nS



Typical Junction Capacitance CJ :60 pF



Typical Thermal Resistance (Note) RθJA thermal resistance coefficient: 50.0 ℃/W; RθJA thermal resistance coefficient: 15.0 ℃/W



Operating Temperature Range TJ Operating Junction Temperature: -55 to +150 ℃



Storage Temperature Range TSTG Storage Temperature Range: -55 to +150 ℃



Package: SMC/DO-214AB


RS3D Parametric

Parameter NameAttribute value
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
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