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RS2MBF

Description
Reverse recovery time (trr): 500ns DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 2A Forward voltage drop (Vf): 1.3V @ 2A
CategoryDiscrete semiconductor    Fast recovery diode   
File Size573KB,2 Pages
ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.
Websitehttp://www.microdiode.com/
Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.
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RS2MBF Overview

Reverse recovery time (trr): 500ns DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 2A Forward voltage drop (Vf): 1.3V @ 2A

RS2MBF Parametric

Parameter NameAttribute value
Reverse recovery time (trr)500ns
DC reverse withstand voltage (Vr)1kV
Average rectified current (Io)2A
Forward voltage drop (Vf)1.3V @ 2A

RS2MBF Preview

Download Datasheet
RS2ABF THRU RS2MBF
SURFACE MOUNT FAST RECOVERY RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 2.0 Amperes
SMBF
Cathode Band
Top View
FEATURES
For surface mounted applications
Low profile package
Glass Passivated Chip Junction
Easy to pick and place
Fast reverse recovery time
Lead free in comply with EU RoHS 2011/65/EU diretives
0.146(3.70)
0.138(3.50)
0.086(2.20)
0.075(1.90)
0.173(4.4)
0.165(4.2)
0.051(1.30)
0.043(1.10)
0.010(0.26)
0.0071(0.18)
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
Case:
JEDEC SMBF molded plastic body
Terminals:
leads solderable per MIL-STD-750,
Method 2026
Mounting Position:
Any
Weight:57mg/0.002oz
0.216(5.5)
0.200(5.1)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=65 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=125 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
SYMBOLS
RS2ABF RS2BBF RS2DBF RS2GBF RS2JBF RS2KBF RS2MBF
UNITS
VOLTS
VOLTS
VOLTS
Amps
R2AB
R2BB
R2DB
R2GB
R2JB
R2KB
R2MB
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
2.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
t
rr
150
50
1.3
5.0
100.0
250
40.0
65.0
-50 to +150
500
Amps
Volts
µ
A
ns
pF
C/W
C
C
J
Typical thermal resistance (NOTE 3)
R
θ
JA
Operating junction and storage temperature range T
J
,
T
STG
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas
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