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RS1DW

Description
1 A, 200 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size63KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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1 A, 200 V, SILICON, SIGNAL DIODE

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RS1AW~RS1MW
SURFACE MOUNT FAST RECOVERY RECTIFIER
VOLTAGE
50 to 1000 Volts
CURRENT
1.0 Ampere
FEATURES
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Fast Recovery times for high efficiency
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICAL DATA
Case: SMA-W molded plastic
Terminals: Solder plated, solderable per MIL-STD-750D,Method 1036.3
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
Weight: 0.002 ounce, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e R e c t i f i e d C ur r e nt a t T
L
= 9 0
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 1 . 0 A
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 2 5
O
C
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 1 )
M a xi m um J unc t i o n c a p a c i t a nc e ( N o t e 2 )
Ty p i c a l J u n c t i o n R e s i s t a n c e ( N o t e 3 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a t i n g
S YM B O L
V
RRM
V
RMS
V
DC
I
F ( A V )
I
F S M
V
F
I
R
t
rr
C
J
R
θ
J A
R
θ
J L
T
J
, T
S TG
R S 1 A W R S 1 B W R S 1 D W R S 1 G W R S 1 J W R S 1 K W R S 1 M W U N IT S
50
35
50
100
70
100
200
140
200
400
280
400
1 .0
30
1 .3
5 .0
150
150
12
100
32
- 5 5 TO + 1 5 0
O
600
420
600
800
560
800
1000
800
1000
V
V
V
A
A
V
uA
250
500
ns
pF
C / W
O
C
NOTES:1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
2. Measured at 1 MHz and applied V
r
= 4.0 volts.
3. 8.0 mm
2
( .013mm thick ) land areas.
STAD-JUN.19.2006
PAGE . 1
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