RL252G datasheet, PDF - EEWORLD Datasheet

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RL252G: DescriptionRectifier Diode,; CategoryDiscrete semiconductor diode; File Size467KB，4 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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RL252G Overview

Rectifier Diode,

RL252G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	compliant

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RL251G THRU RL257G

General Purpose Rectifier

Features

● High efficiency

● High current capability

● High reliability

● High surge current capability

● Low power loss

● Glass passivated chip junction

● Solder dip 275 °C max. 7 s, per JESD 22-B106

RoHS

COMPLIANT

Mechanical Data

●

Package:

DO-204AC(DO-15)

Molding compound meets UL 94 V-0 flammability rating,

RoHS-compliant

●

Terminals:

Tin plated leads, solderable per J-STD-

002 and JESD22-B102

●

Polarity:

Color band denotes cathode end

■Maximum Ratings

(Ta=25℃ Unless otherwise specified）

PARAMETER

Device marking code

Repetitive Peak Reverse Voltage

Average Forward Current

@60Hz sine wave, Resistance load, Ta =50℃

Forward Surge Current (Non-repetitive)

@60Hz Half-sine wave,1 cycle, Ta=25℃

Storage Temperature

Junction Temperature

RRM

F(AV)

SYMBOL

UNIT

RL251G

RL252G

100

RL253G

200

RL254G

400

2.5

RL255G

600

RL256G

800

RL257G

1000

FSM

Tstg

℃

120

-55 ~+150

-55~+150

■Electrical

Characteristics

（T

=25℃ Unless otherwise specified）

PARAMETER

Maximum instantaneous

forward voltage drop per diode

Maximum DC reverse current

at rated DC blocking voltage

per diode

SYMBOL

RRM1

μA

RRM2

Ta=100℃

Measured at 1MHZ

and Applied Reverse

Voltage of 4.0 V.D.C.

UNIT

TEST CONDITIONS

=2.5A

Ta=25℃

RL251G

RL252G

RL253G

RL254G

1.1

2.5

RL255G RL256G

RL257G

Typical junction capacitance

■

Thermal Characteristics

（T

=25℃ Unless otherwise specified）

PARAMETER

Thermal Resistance(Typical)

SYMBOL

θJ-A

UNIT

℃/W

RL251G

RL252G

RL253G

RL254G

RL255G

RL256G

RL257G

1/4

S-A136

Rev.2.1,28-Apr-14

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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