PTF7N65 datasheet, PDF - EEWORLD Datasheet

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PTF7N65: DescriptionDrain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 7A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 1.3Ω @ 3.5A, 10V Maximum power Dissipation (Ta=25°C): 48W(Tj) Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size4MB，5 Pages; ManufacturerhenZhen Puolop Electronics co.,LTD.; Websitehttp://www.puolop.com/; Shenzhen Dipu Electronics Co., Ltd. is one of the earliest leading design and sales companies in China engaged in low-dropout voltage regulator circuits (LDO), MOS tubes, power management ICs and power semiconductor devices. It specializes in the design, production and sales of various power management ICs and power semiconductor devices. Since its establishment, Dipu has developed rapidly, and its products have covered power management ICs (lithium battery charging IC/LDO IC/low voltage detection (reset) IC/DC-DC boost & buck IC/white light backlight IC/voltage reference source IC/voltage regulator IC/DC-DC general conversion IC, etc.), MOS tubes (low voltage MOS/medium voltage high current MOS/high voltage MOS), IGBT, EEPROM IC, audio amplifier IC, clock calendar IC, LED driver IC, high-voltage switch transistors and many other types of hundreds of models. "Quality first, customer first" is not only the business purpose of Dipu, but also the basis for Dipu's continuous and rapid development. We attach great importance to the opinions of customers and try our best to meet customer requirements from beginning to end. We have always believed that quality is the first responsibility of all our colleagues, and we have always been proud of Dipu's strict quality management system.

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PTF7N65 Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 7A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 1.3Ω @ 3.5A, 10V Maximum power Dissipation (Ta=25°C): 48W(Tj) Type: N-channel

PTF7N65 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	650V
Continuous drain current (Id) at 25°C	7A(Tc)
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	1.3Ω @ 3.5A,10V
Maximum power dissipation (Ta=25°C)	48W(Tj)
type	N channel

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PTF7 N65

65 0V/7 A

N-Channel A dv anced Power MOSFET

Features

■

DS(on)

(Typical 1.0

Ω

)@V

=10V

Improved dv/dt Capability, High Ruggedness

100% Avalanche Tested

Maximum Junction Temperature Range (150°C)

GDS

TO-220F

Absolute Maximum Ratings

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may

affect device reliability.

Symbol

Parameter

Rating

Unit

Common Ratings (T

=25°C Unless Otherwise Noted)

Gate-Source Voltage

Drain-Source Breakdown Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

±30

650

-50 to 150

--50 to 150

°C

(BR)DSS

STG

Mounted on Large Heat Sink (T

=25°C Unless Otherwise Noted)

Pulse Drain Current Tested (Sillicon Limit)

Continuous Drain current@V

=10 V

Maximum Power Dissipation

Sing Pulsed Avalanche Energy

(Note2)

(Note1)

°C/W



=25°C

385

2.7

62.5

Thermal Resistance Junction−to−Case

Thermal Resistance Junction−to−Ambient

Note :

1. Repetitive Rating:Pulse width limited by maximum junction temperature.

2. IL=15.7mH,IAS=7 A,VDD=50V,RG=25 Ω,Tj=25

°C

- 1-

2018-8-22

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