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PTD50N06

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 50A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 20mΩ @ 20A, 10V Maximum power dissipation (Ta =25°C): 85W Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,4 Pages
ManufacturerhenZhen Puolop Electronics co.,LTD.
Websitehttp://www.puolop.com/
Shenzhen Dipu Electronics Co., Ltd. is one of the earliest leading design and sales companies in China engaged in low-dropout voltage regulator circuits (LDO), MOS tubes, power management ICs and power semiconductor devices. It specializes in the design, production and sales of various power management ICs and power semiconductor devices. Since its establishment, Dipu has developed rapidly, and its products have covered power management ICs (lithium battery charging IC/LDO IC/low voltage detection (reset) IC/DC-DC boost & buck IC/white light backlight IC/voltage reference source IC/voltage regulator IC/DC-DC general conversion IC, etc.), MOS tubes (low voltage MOS/medium voltage high current MOS/high voltage MOS), IGBT, EEPROM IC, audio amplifier IC, clock calendar IC, LED driver IC, high-voltage switch transistors and many other types of hundreds of models. "Quality first, customer first" is not only the business purpose of Dipu, but also the basis for Dipu's continuous and rapid development. We attach great importance to the opinions of customers and try our best to meet customer requirements from beginning to end. We have always believed that quality is the first responsibility of all our colleagues, and we have always been proud of Dipu's strict quality management system.
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PTD50N06 Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 50A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 20mΩ @ 20A, 10V Maximum power dissipation (Ta =25°C): 85W Type: N-channel

PTD50N06 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)60V
Continuous drain current (Id) at 25°C50A
Gate-source threshold voltage2.5V @ 250uA
Drain-source on-resistance20mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)85W
typeN channel
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