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PS30U120CT

CategoryDiscrete semiconductor    Schottky diode   
File Size276KB,4 Pages
ManufacturerChongqing Pingwei Enterprise co.,Ltd.
Websitehttp://www.perfectway.cn
Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).
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PS30U120CT&PS30U120FCT
PS30U120CT&PS30U120FCT
30.0AMPS. SCHOTTKY BARRIER RECTIFIERS
FEATURE
.High
current capability
.Ultra
low forward voltage drop
.Low
power loss, high efficiency
.High
surge capability
.High
temperature soldering guaranteed
260°C /10seconds, 0.25"(6.35mm)from case.
TO-220AB
PS30U120CT
ITO-220AB
PS30U120FCT
MECHANICAL DATA
.Case: Molded with UL-94 Class V-0 recognized
Flame Retardant Epoxy
.Mounting position: any
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
MAXIMUM RATINGS
(T
C
=25℃ unless otherwise noted)
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified Current
at T
C
=100°C
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
Operation Junction Temperature and Storage Temperature
Maximum Mounting torque, M3 or 6-32 srew
Per Leg
Total device
Per Leg
Symbol
PS30U120CT&PS30U120FCT
120
84
120
15.0
30.0
175.0
485
-55 to +150
1.1N•m (10 lbf•in)
Units
V
V
V
A
A
pF
°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
C
J
T
J
,
T
STG
Peak Forward Surge Current 8.3ms single half sine-wave
ELECTRICAL CHARACTERISTICS-
(per leg)
Parameter
Symbol
Test conditions
(TA=25℃ unless otherwise noted)
Typ
Max
——
——
Units
T
J
=25℃
Forward voltage drop
V
F
T
J
=125℃
Reverse leakage current
I
R
T
J
=25℃
T
J
=125℃
I
F
=3A
I
F
=5A
I
F
=15A
I
F
=3A
I
F
=5A
I
F
=15A
V
R
=120V
V
R
=120V
Symbol
0.49
0.56
0.87
0.44
0.50
0.68
——
——
PS30U120CT
2.0
0.95
——
——
V
0.75
100
μA
mA
20
PS30U120FCT
3.0
THERMAL CHARACTERISTICS
(TC=25℃ unless otherwise noted)
Parameter
Typical Thermal Resistance (Note 2)
Units
°C /W
R
(JC)
Notes:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2. Thermal Resistance from Junction to Case
Version1.0-2015.2
1
www.perfectway.cn
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