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PS10U150FS

Description
DC reverse withstand voltage (Vr): 150V Average rectified current (Io): 10A Forward voltage drop (Vf): 950mV @ 10A
CategoryDiscrete semiconductor    Schottky diode   
File Size273KB,4 Pages
ManufacturerChongqing Pingwei Enterprise co.,Ltd.
Websitehttp://www.perfectway.cn
Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).
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PS10U150FS Overview

DC reverse withstand voltage (Vr): 150V Average rectified current (Io): 10A Forward voltage drop (Vf): 950mV @ 10A

PS10U150FS Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)150V
Average rectified current (Io)10A
Forward voltage drop (Vf)950mV @ 10A

PS10U150FS Preview

Download Datasheet
PS10U150S&PS10U150FS
PS10U150S&PS10U150FS
10.0AMPS. SCHOTTKY BARRIER RECTIFIERS
FEATURE
.High
current capability
.Ultra
low forward voltage drop
.Low
power loss, high efficiency
.High
surge capability
.High
temperature soldering guaranteed
260°C /10seconds, 0.25"(6.35mm)from case.
TO-220AB
PS10U150S
ITO-220AB
PS10U150FS
MECHANICAL DATA
.Case:
Molded with UL-94 Class V-0 recognized
Flame Retardant Epoxy
.Mounting
position: any
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
MAXIMUM RATINGS
(T
C
=25℃ unless otherwise noted)
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified Current
at T
C
=100°C
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
Operation Junction Temperature and Storage Temperature
Maximum Mounting torque, M3 or 6-32 srew
Total device
Peak Forward Surge Current 8.3ms single half sine-wave
Symbol
PS10U150S&PS10U150FS
150
105
150
10.0
120.0
260
-55 to +150
1.1N•m (10 lbf•in)
Typ
Max
----
----
0.95
----
----
0.80
0.1
15
Units
V
V
V
A
A
pF
°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
C
J
T
J
,
T
STG
ELECTICAL CHARACTERISTICS
T
C
=25℃ unless otherwise noted)
Parameter
Symbol
Test conditions
Units
T
J
=25℃
Forward voltage drop
V
F
T
J
=125℃
Reverse leakage current
I
R
THERMAL CHARACTERISTICS
(T
C
=25℃ unless otherwise noted)
Parameter
Typical Thermal Resistance (Note 2)
T
J
=25℃
T
J
=125℃
I
F
=3A
I
F
=5A
I
F
=10A
I
F
=3A
I
F
=5A
I
F
=10A
V
R
=150V
V
R
=150V
0.68
0.73
0.81
0.54
0.60
0.67
----
----
V
mA
Symbol
PS10U150S
2.0
PS10U150FS
3.0
Units
°C /W
R
(JC)
Notes:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2. Thermal Resistance from Junction to Case
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