PJU4NA90_T0_00001 datasheet, PDF

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PJU4NA90_T0_00001: DescriptionPower Field-Effect Transistor, 4A I(D), 900V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,; CategoryDiscrete semiconductor The transistor; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJU4NA90_T0_00001 Overview

Power Field-Effect Transistor, 4A I(D), 900V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,

PJU4NA90_T0_00001 Parametric

Parameter Name	Attribute value
Maker	PANJIT
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	344 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	900 V
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	3.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	16 A
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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PPJU4NA90

/ PJD4NA90 / PJP4NA90 / PJF4NA90

900V N-Channel MOSFET

Voltage

Features



DS(ON)

, V

@10V,I

@2A<3.4Ω



High switching speed



Improved dv/dt capability



Low Gate Charge



Low reverse transfer capacitance



Lead free in compliance with EU RoHS 2011/65/EU directive.



Green molding compound as per IEC61249 Std.

TO-252AA

TO-251AA

ITO-220AB-F

TO-220AB

900 V

Current

(Halogen Free)

Mechanical Data



Case: TO-251AA,TO-252AA ,TO-220AB, ITO-220AB-F Package



Terminals : Solderable per MIL-STD-750, Method 2026



TO-251AA Approx. Weight : 0.0104 ounces, 0.297grams



TO-252AA Approx. Weight : 0.0104 ounces, 0.297grams



TO-220AB Approx. Weight : 0.065 ounces, 1.859 grams



ITO-220AB-F Approx. Weight : 0.068 ounces, 1.945 grams

Maximum Ratings and Thermal Characteristics

=25 C unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Single Pulse Avalanche Energy

(Note 1)

Power Dissipation

=25

Derate above 25 C

SYMBOL

TO-251AA

TO-220AB

ITO-220AB-F

TO-252AA

UNITS

900

+30

344

140

1.12

-55~150

0.35

0.72

W/ C

0.72

Operating Junction and

Storage Temperature Range

Typical Thermal resistance

Junction to Case

Junction to Ambient

STG

θJC

θJA

1.39

110

0.89

62.5

2.84

120

1.39

110

C/W



Limited only By Maximum Junction Temperature

April 21,2015-REV.00

Page 1

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