PJU4NA90 datasheet, PDF - EEWORLD Datasheet

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PJU4NA90: Description900V N-Channel MOSFET; File Size423KB，8 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJU4NA90 Overview

900V N-Channel MOSFET

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PPJU4NA90

/ PJD4NA90 / PJP4NA90 / PJF4NA90

900V N-Channel MOSFET

Voltage

Features



DS(ON)

, V

@10V,I

@2A<3.4Ω



High switching speed



Improved dv/dt capability



Low Gate Charge



Low reverse transfer capacitance



Lead free in compliance with EU RoHS 2011/65/EU directive.



Green molding compound as per IEC61249 Std.

TO-252AA

TO-251AA

ITO-220AB-F

TO-220AB

900 V

Current

(Halogen Free)

Mechanical Data



Case: TO-251AA,TO-252AA ,TO-220AB, ITO-220AB-F Package



Terminals : Solderable per MIL-STD-750, Method 2026



TO-251AA Approx. Weight : 0.0104 ounces, 0.297grams



TO-252AA Approx. Weight : 0.0104 ounces, 0.297grams



TO-220AB Approx. Weight : 0.065 ounces, 1.859 grams



ITO-220AB-F Approx. Weight : 0.068 ounces, 1.945 grams

Maximum Ratings and Thermal Characteristics

=25 C unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Single Pulse Avalanche Energy

(Note 1)

Power Dissipation

=25

Derate above 25 C

SYMBOL

TO-251AA

TO-220AB

ITO-220AB-F

TO-252AA

UNITS

900

+30

344

140

1.12

-55~150

0.35

0.72

W/ C

0.72

Operating Junction and

Storage Temperature Range

Typical Thermal resistance

Junction to Case

Junction to Ambient

STG

θJC

θJA

1.39

110

0.89

62.5

2.84

120

1.39

110

C/W



Limited only By Maximum Junction Temperature

April 21,2015-REV.00

Page 1

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