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PJT7600_R2_00001

Description
20V Complementary Enhancement Mode MOSFET . ESD Protected
File Size484KB,9 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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20V Complementary Enhancement Mode MOSFET . ESD Protected

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PPJT7600
20V Complementary Enhancement Mode MOSFET – ESD Protected
Voltage
Features
Application
20 / -20V
Current
1 / -0.7A
SOT-363
Unit: inch(mm)
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected
Lead free in comply with EU RoHS 2011/65/EU directives.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-363 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0002 ounces, 0.006 grams
Marking: T60
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
(Note 4)
o
SYMBOL
V
DS
V
GS
I
D
I
DM
T
a
=25
o
C
Derate above 25
o
C
P
D
T
J
,T
STG
R
θJA
N-Ch LIMIT
P-Ch LIMIT
UNITS
V
V
A
A
mW
mW/
o
C
o
20
+8
1
4
350
2.8
-55~150
357
-20
+8
-0.7
-2.8
Operating Junction and Storage Temperature Range
Thermal resistance
-
Junction to Ambient
(Note 3)
C
o
C/W
August 16,2013-REV.00
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