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PJSM6V8TB_R1_10001

Description
Trans Voltage Suppressor Diode
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJSM6V8TB_R1_10001 Overview

Trans Voltage Suppressor Diode

PJSM6V8TB_R1_10001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Reach Compliance Codecompliant
ECCN codeEAR99
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE

PJSM6V8TB_R1_10001 Preview

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PJSM6V8TB
BI-DIRECTIONAL TVS/ZENER FOR ESD PROTECTION
VOLTAGE
FEATURES
• IEC61000-4-2 ESD 6kV Air, 6kV Contact Compliance
• Low Leakage Current
• Low Clamping Voltage
• Peak Power Dissipation of 40W Under 8/20μs Waveform
• Molded JEDEC SOT-523 Package
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
5 Volts
POWER
40 Watts
MECHANICAL DATA
• Case: SOT-523, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Weight: approximately 0.00007 ounces,0.002 grams
• Marking : M8
3
1
o
2
MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
RATING
Peak Pulse Power (8/20μs waveform)
ESD per IEC 61000-4-2 Contact
ESD per IEC 61000-4-2 Air
O p e r a ti ng J unc ti o n a nd S t o r a g e Te m p e r a tur e Ra ng e
SYMBOL
P
PP
V
ESD
V
ESD
T
J
,T
STG
VALUE
40
+6
+6
-55 to +150
UNIT
W
kV
kV
O
C
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
PARAMETER
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20μs)
Junction Capacitance
SYMBOL
V
RWM
V
BR
I
R
V
C
C
J
CONDITIONS
-
I
BR
=1mA
V
R
=5V
I
PP
=3A
0 Vdc Bias,f=1MHz Between
MIN.
-
6.3
-
-
-
TYP.
-
7.7
-
-
-
MAX.
5
8.7
5
14
10
UNITS
V
V
μA
V
pF
o
February 22.2012-REV.00
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