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PJQ2800

Description
20V N-Channel Enhancement Mode MOSFET
File Size301KB,7 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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20V N-Channel Enhancement Mode MOSFET

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PPJQ2800
20V N-Channel Enhancement Mode MOSFET
Voltage
Features
RDS(ON) , VGS@4.5V, ID@5.2A<32mΩ
RDS(ON) , VGS@2.5V, ID@3.2A<45mΩ
RDS(ON) , VGS@1.8V, ID@2.0A<65mΩ
Advanced Trench Process Technology
High density cell design for ultra low on-resistance
ESD Protected
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
20 V
Current
5.2A
DFN2020-6L
(Halogen Free)
Mechanical Data
Case: DFN2020-6L Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00032 ounces, 0.0093 grams
Marking: 800
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
o
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
a
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
LIMIT
UNITS
V
V
A
A
W
mW/
o
C
o
20
+8
5.2
20.8
1.45
11.6
-55~150
86
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
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