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PJQ1902

Description
30V N-Channel Enhancement Mode MOSFET – ESD Protected
File Size332KB,7 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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30V N-Channel Enhancement Mode MOSFET – ESD Protected

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PPJQ1902
30V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
Features
30 V
Current
500mA
DFN3L
Unit: inch(mm)
R
DS(ON)
, V
GS
@4.5V, I
D
@350mA<1.2Ω
R
DS(ON)
, V
GS
@2.5V, I
D
@200mA<1.6Ω
R
DS(ON)
, V
GS
@1.8V, I
D
@80mA<2.3Ω
R
DS(ON)
, V
GS
@1.5V, I
D
@10mA<2.5Ω(typ.)
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected 2KV HBM
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: DFN3L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00004 ounces, 0.0011 grams
Marking: 2
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
a
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
LIMIT
o
UNITS
V
V
mA
mA
mW
mW/
o
C
o
30
+10
500
1500
700
5.6
-55~150
175
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
September 30,2015-REV.00
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