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PJP12NA60

Description
600V N-Channel MOSFET
File Size322KB,8 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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600V N-Channel MOSFET

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PPJP12NA60
/ PJF12NA60
600V N-Channel MOSFET
Voltage
Features
R
DS(ON)
, V
GS
@10V,I
D
@6A<0.7Ω
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
ITO-220AB-F
TO-220AB
600 V
Current
12 A
(Halogen Free)
Mechanical Data
Case : TO-220AB, ITO-220AB-F Package
Terminals : Solderable per MIL-STD-750, Method 2026
TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams
ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy
(Note 1)
Power Dissipation
T
C
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
P
D
225
1.8
-55~150
TO-220AB
ITO-220AB-F
o
UNITS
V
V
A
A
mJ
600
+30
12
48
795
51
0.41
W
W/
o
C
o
Operating Junction and
Storage Temperature Range
Typical Thermal resistance
-
-
Junction to Case
Junction to Ambient
T
J
,T
STG
C
R
θJC
R
θJA
0.56
62.5
2.45
120
o
C/W
Limited only By Maximum Junction Temperature
March 10,2014-REV.00
Page 1
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