PJGBLC08C-AU_R2_00001 datasheet, PDF

PJGBLC08C-AU_R2_00001: DescriptionTrans Voltage Suppressor Diode, 350W, 8V V(RWM), Bidirectional, 1 Element, Silicon,; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJGBLC08C-AU_R2_00001 Overview

Trans Voltage Suppressor Diode, 350W, 8V V(RWM), Bidirectional, 1 Element, Silicon,

Parameter Name	Attribute value
package instruction	R-PDSO-F2
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum breakdown voltage	9.87 V
Minimum breakdown voltage	8.93 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-F2
Maximum non-repetitive peak reverse power dissipation	350 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
polarity	BIDIRECTIONAL
Guideline	AEC-Q101; IEC-61000-4-2; TS 16949
Maximum repetitive peak reverse voltage	8 V
surface mount	YES
technology	AVALANCHE
Terminal form	FLAT
Terminal location	DUAL
Base Number Matches	1

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