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PJESDZ6V8-2G

Description
20 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size83KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJESDZ6V8-2G Overview

20 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE

PJESDZ6V8-2G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
package instructionR-PDSO-F3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum breakdown voltage7.2 V
Minimum breakdown voltage6.2 V
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-F3
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation20 W
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage5 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

PJESDZ6V8-2G Preview

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PJESDZ6V8-2G
E.S.D. Dual Protection Diode Array
This Dual Unidirectional ESD Protector Array family have been designed to protect
sensitive equipment against ESD in high speed transmission buses, operating at
5V. This dual array offers an integrated solution to protect up to
2 data lines in a unidirectional mode or, 1 data line in a bi-directional mode, in
application where the board space is a premium, in our SOT523 package
version.
PANJIT SOT523
3
SPECIFICATION FEATURES
IEC61000-4-2 ESD 15kV air, 8kV Contact Compliance
Low Leakage Current, Maximum of 0.5µA at rated voltage
Maximum Capacitance of 10pF per device at 0Vdc 1MHz
Peak Power Dissipation of 20W 8/20µs Waveform
Pin to pin compatible with standard SOT523
Lead Free Package 100% Tin Plating, Matte finish
Low profile, Max height of 0.55mm
1
2
3
APPLICATIONS
Mobile Phones
Digital Cameras
Notebooks PC's
1
2
MAXIMUM RATINGS (Per Device)
Rating
Peak Pulse Power (8/20µs Waveform)
Peak Pulse Current (8/20µs Waveform)
ESD Voltage (HBM Per MIL STD883C - Method 3015-6)
Operating Temperature Range
Storage Temperature Range
Symbol
P
PP
I
PPM
V
ESD
TJ
T
stg
Value
20
2
20
-55 to +125
-55 to +150
Units
W
A
kV
°C
°C
ELECTRICAL CHARACTERISTICS (Per Device)
Tj = 25°C
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Off State Junction Capacitance*
Symbol
V
WRM
V
BR
I
R
V
c
Cj
I
BR
= 1mA
V
R
= 5V
I pp = 2A
0 Vdc Bias f = 1MHz
between pin 1, 2 to 3 (Gnd)
Conditions
Min
Typical
Max
5.0
Units
V
V
µA
V
pF
6.2
7.2
0.5
10
9
10
* Capacitance between pins 1 and 2 is half of the value, in a bi-directional configuration.
12/9/2008
Page
1
www.panjit.com
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