PJESDA6V8-5GT/R7 datasheet, PDF

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PJESDA6V8-5GT/R7: DescriptionTrans Voltage Suppressor Diode, 40W, 5V V(RWM), Unidirectional, 5 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJESDA6V8-5GT/R7 Overview

Trans Voltage Suppressor Diode, 40W, 5V V(RWM), Unidirectional, 5 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6

PJESDA6V8-5GT/R7 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	R-PDSO-F6
Contacts	6
Reach Compliance Code	compliant
Maximum breakdown voltage	7.04 V
Minimum breakdown voltage	6.37 V
Configuration	COMMON ANODE, 5 ELEMENTS
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-F6
Maximum non-repetitive peak reverse power dissipation	40 W
Number of components	5
Number of terminals	6
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.3 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	5 V
surface mount	YES
technology	AVALANCHE
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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PJESDA5V6-5G SERIES

QUAD ARRAY FOR ESD PROTECTION

FEATURES

• Low Leakage < 1A@V

RWM

• Breakdown Voltage : 5.6Volt-6.7Volt@1mA

• ESD Protection Meeting IEC61000-4-2-Level 4

• In compliance with EU RoHS 2002/95/EC directives

SOT-563

MECHANICAL DATA

Case : SOT-563, Plastic

Terminals : Solderable per MIL-STD-750, Method 2026

Approx. Weight : 0.003 gram

MAXIMUM RATINGS (T

=25

C unless otherwise noted)

Parameter

P e a k P o we r D i s s i p a ti o n (8 x2 0



s @ T

= 2 5

C )(No t e 1 )

S t e a d y S t a te P o we r- 1 D i o d e ( No t e 2 )

The r ma l Re s i s ta nc e J unc t i o n t o A m b i e nt A b o ve 2 5

C , D e ra t e

L e a d S o ld e r Te m p e ra t ure ( 1 0 s e c o nd s d ura t i o n)

O p e r a t i ng J unc t i o n a nd S t o ra g e Te m p e ra t ure R a ng e

Symbol



S TG

Limits

300

370

2.7

260

-55 to +150

Unit

C/W

mW/

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional

operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Condtions may affect device reliability.

ELECTRICAL CHARACTERISTICS (T

=25

B re a k do wn Volta g e

B R

@1mA ( Vo lts )

Mi n

PJESDA5V6-5G

PJESDA6V2-5G

PJESDA6V8-5G

5.32

5.89

6.37

No m

5.6

6.2

6.7

Ma x

5.88

6.51

7.04

L e a k ag e C urre nt

RWM

3.0

4.3

5.0

RWM

Ma x@I

P P

5.0

4.5

4.0

Part Number

Ma x Capacitance

@0V Bias

(1MHz)

Marking

A

1.Non-repetitive current per Figure 1.

2.Only 1 diode under power. For all 4 diodes under power, P

will be 25%. Mounted on FR-4 board with min pad

REV.0.1-JUN.11.2009

PAGE . 1

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