PJESDA6V8-4LCGT/R13 datasheet, PDF

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PJESDA6V8-4LCGT/R13: DescriptionTrans Voltage Suppressor Diode, 20W, Unidirectional, 4 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-5; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJESDA6V8-4LCGT/R13 Overview

Trans Voltage Suppressor Diode, 20W, Unidirectional, 4 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-5

PJESDA6V8-4LCGT/R13 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	R-PDSO-F5
Contacts	5
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum breakdown voltage	7.04 V
Minimum breakdown voltage	6.37 V
Configuration	COMMON ANODE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-F5
Maximum non-repetitive peak reverse power dissipation	20 W
Number of components	4
Number of terminals	5
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.38 W
surface mount	YES
technology	AVALANCHE
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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PJESDA5V6-4LCG SERIES

LOW CAPACITANCE QUAD ARREY FOR ESD

PROTECTION

FEATURES

• ESD Protection : IEC61000-4-2

• Four Separate Unidirectional Configurations for Protection

• Low Leakage Current < 1μA @ 3Volts

• Power Dissipation : 380mW

• Low Capacitance

•

0.007(0.17)

0.002(0.07)

0.052(1.30)

0.043(1.10)

0.067(1.70)

0.059(1.50)

0.024(0.60)

0.019(0.50)

0.011(0.27)

0.006(0.17)

MECHANICAL DATA

• Case: SOT-553, Molded Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Polarity: See Diagram Below

• Approx. Weight: 0.002 gram

• Mounting Position: Any

0.012(0.30)

0.004(0.10)

MAXIMUM RATINGS (T

=25

C unless otherwise noted)

Parameter

Peak Power Dissipation (8x20

s@T

=25

C) (Note 1)

Steady State Power-1 Diode (Note 2)

Thermal Resistance, Junction-to-Ambient Above 25

C Derate

Maximum Junction Temperature

Operating Junction and Storage Temperature Range

Lead Solder Temperature (10 seconds duration)

Symbol

JMAX

STG

Value

380

327

3.05

150

-55 to +150

260

Units

C/W

mW/

0.044(1.10)

0.035(0.90)

0.067(1.70)

0.059(1.50)

ELECTRAICAL CHARACTERISTICS(T

=25

B re a k d o wn Vo lta ge

B R

@1 mA (V o lts )

Mi n.

PJESDA5V6-4LCG

PJESDA6V8-4LCG

5.32

6.37

No m.

5.60

6.71

Ma x.

5.88

7.04

Leakage Current

RW M

3.0

RWM

(mA )

0.5

(V)

(A)

1.6

Typ Capacitance@0V Typ Capacitance@3V

Marking

Bias (pF)(Note 3)

Typ

Max

Typ

7.0

6.7

Max

11.5

9.5

Part Number

Code

NOTES :

1.Non-repetitive current per Figure 1.

2.Only 1 diode under power. For all 4 diodes under power,P

will be 25%.

Mounted on FR-4 board with min pad.

3.Capacitance of one diode at f=1MHz, V

=0V, T

=25

August 03,2011-REV.01

PAGE . 1

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