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PJESDA6V8-4LCG-R2-00001

Description
PJESDA6V8-4LCG-R2-00001
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJESDA6V8-4LCG-R2-00001 Overview

PJESDA6V8-4LCG-R2-00001

PJESDA6V8-4LCG-R2-00001 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codeunknown

PJESDA6V8-4LCG-R2-00001 Preview

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PJESDA5V6-4LCG SERIES
LOW CAPACITANCE QUAD ARREY FOR ESD
PROTECTION
FEATURES
• ESD Protection : IEC61000-4-2
• Four Separate Unidirectional Configurations for Protection
• Low Leakage Current < 1μA @ 3Volts
• Power Dissipation : 380mW
• Low Capacitance
0.007(0.17)
0.002(0.07)
0.052(1.30)
0.043(1.10)
0.067(1.70)
0.059(1.50)
0.024(0.60)
0.019(0.50)
0.011(0.27)
0.006(0.17)
MECHANICAL DATA
• Case: SOT-553, Molded Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.002 gram
• Mounting Position: Any
0.012(0.30)
0.004(0.10)
MAXIMUM RATINGS (T
A
=25
o
C unless otherwise noted)
Parameter
Peak Power Dissipation (8x20
μ
s@T
A
=25
o
C) (Note 1)
Steady State Power-1 Diode (Note 2)
Thermal Resistance, Junction-to-Ambient Above 25
o
C Derate
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
Lead Solder Temperature (10 seconds duration)
Symbol
P
PK
P
D
R
Θ
JA
T
JMAX
T
J
,T
STG
T
L
Value
20
380
327
3.05
150
-55 to +150
260
Units
W
mW
O
C/W
mW/
O
C
O
0.044(1.10)
0.035(0.90)
0.067(1.70)
0.059(1.50)
C
C
C
O
O
ELECTRAICAL CHARACTERISTICS(T
A
=25
o
C)
B re a k d o wn Vo lta ge
V
B R
@1 mA (V o lts )
Mi n.
PJESDA5V6-4LCG
PJESDA6V8-4LCG
5.32
6.37
No m.
5.60
6.71
Ma x.
5.88
7.04
Leakage Current
I
RM
@V
RM
V
RW M
3.0
5
I
RWM
(mA )
0.5
0.5
V
C
M
AX
@I
PP
V
C
(V)
13
13
I
PP
(A)
1.6
1.6
Typ Capacitance@0V Typ Capacitance@3V
Marking
Bias (pF)(Note 3)
Bias (pF)(Note 3)
Typ
13
12
Max
17
15
Typ
7.0
6.7
Max
11.5
9.5
Part Number
Code
SH
SL
6
NOTES :
1.Non-repetitive current per Figure 1.
2.Only 1 diode under power. For all 4 diodes under power,P
D
will be 25%.
Mounted on FR-4 board with min pad.
3.Capacitance of one diode at f=1MHz, V
R
=0V, T
A
=25
o
C
4
1
August 03,2011-REV.01
2
3
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